THERMAL, DIELECTRIC, AND SURFACE ANALYSIS OF NaDP DOPED GLYCINE PHOSPHITE SINGLE CRYSTALS
S. Supriya, F. FernГЎndez-Martinez
Mechanical Engineering, Chemistry and Industrial Design Department, E.T.S.I.D.I., Technical University of Madrid, Madrid, Spain
sciencepriya@gmail.com
Ключевые слова: atomic force microscopy, characterization, surfaces, growth from solutions, single crystal growth, dielectric materials
Страницы: 1718-1721
Аннотация
Transparent, unidirectional single crystals of sodium dihydrogen phosphate-doped glycine phosphite (NaDP-GPI) are grown by the Sankaranarayanan-Ramasamy method. The good quality crystal is obtained under controlled thermal conditions. The functional groups and melting temperature of NaDP-GPI single crystals are analysed. The phase transition temperature of NaDP-GPI is calculated from the dielectric studies. The mound-like patterns are observed on the surface of the crystal. The growth process under the controlled thermal condition was observed by optical studies. The obtained results are discussed in detail.
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