Издательство СО РАН

Издательство СО РАН

Адрес Издательства СО РАН: Россия, 630090, а/я 187
Новосибирск, Морской пр., 2

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Поиск по журналу

Журнал структурной химии

2012 год, номер 2

TENSILE DEFORMATION INDUCED STRUCTURAL REARRANGEMENT IN AMORPHOUS SILICON NITRIDE

N. Liao1, W. Xue1, P. Yang2, M. Zhang1
1 College of Mechanical and Electrical Engineering, Wenzhou University
2 Laboratory of Materials and Micro-Structural Integrity, Jiangsu University
Ключевые слова: silicon nitride, molecular dynamics, tensile deformation, amorphous structure
Страницы: 219-223

Аннотация

Silicon nitride exhibits good mechanical properties and thermal stability at high temperatures. Since experiments have limitations in nanoscale characterization of the chemical structure and related properties, atomistic simulation is a proper way to investigate the mechanism of this unique feature. In this paper, the melt-quench method is used to generate the amorphous structure of silicon nitride; then the structural properties of silicon nitride under tensile deformation were studied by angular pair distribution functions. The corresponding mechanism of tensile stress induced structure rearrangement is explored.